X-ray Photoelectron Spectroscopy Studies of ITO Thin Films
Chen Men
Abstract
Chen Men
Abstract
The chemical states of In, Sn and O in Sn-doped In_2O_3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O~2-ions, O_iand O_II, can be distinguished by Gaussian simulation. O_I has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and O_II has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.
OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
The chemical states of In, Sn and O in Sn-doped In_2O_3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O~2-ions, O_iand O_II, can be distinguished by Gaussian simulation. O_I has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and O_II has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.
Key concepts: X-ray photoelectron spectroscopy, Binding energy, Chemical state, Materials science, Analytical Chemistry (journal), Spectroscopy, Oxygen, Doping