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The mechanism of HPM pulse-duration damage effect on semiconductor component

Ping Li

Abstract

The mechanism of HPM pulse duration damage effect on semiconductor component results from heat accumulation and diffusion process in the defect area. The experiential formulae of HPM pulse duration damage effect in the range of whole pulse durarion, long pulse duration as well as short pulse duration are obtained, which agree with experiments and numerical simulation effect data very well.

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Available abstract

Key concepts: Pulse duration, Pulse (music), Duration (music), Materials science, Diffusion, Semiconductor, Component (thermodynamics), Optics