Influence of pulse parameters on the damage effect of the GaAs PHEMT caused by the repetition pulse

This paper investigates the influence of the pulse width, pulse period, and duty ratio on the damage effect of the GaAs pseudomorphic high electron mobility transistor (PHEMT) under the injection of the repletion pulse. First, a damage model is established and verified. Then, based on this model the influence of pulse parameters on the damage effect of the GaAs PHEMT is analyzed. It can be seen that the pulse parameters can significantly affect the damage effect of the device. The increase of the pulse width can aid the damage of the device by increasing the heat of the device obtained by the signal. The influence of the pulse period depends on its variation caused by the change of the pulse width or the pulse interval. When the variation results from the change of the pulse width, the pulse period is inversely proportional to the damage time of the device. When the variation results from the change of the pulse interval, the pulse period is directly proportional to the damage time. The duty ratio is inversely proportional to the damage time of the device by affecting the heat production and dissipation simultaneously. It is found that there is a pulse period and duty ratio safe thresholds. When the injected signal is in the threshold range, the device is safe and has not potential damage under the effect of the repetition pulse.