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2006•Research & Progress of SSE Solid State ElectronicsRequires access

Threshold Voltage Model of SiGe Channel pMOSFET

Xiao Zou, Xu Jing-Ping

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Abstract

An analytical model on threshold voltage of SiGe channel pMOSFET is developed by solving Poisson's equation.Short channel effect(SCE) and drain induced barrier lower(DIBL) are taken into account in the model.Simulated results show satisfactory agreement with experiment data.Simulated results also show:channel length,Ge content,substrate doping concentration,cap layer thickness and gate oxide thickness affect threshold voltage intensively while channel length less than 200 nm.SCE and DIBL may be ignorable while channel length is more than 500 nm.

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What this paper is about

An analytical model on threshold voltage of SiGe channel pMOSFET is developed by solving Poisson's equation.Short channel effect(SCE) and drain induced barrier lower(DIBL) are taken into account in the model.Simulated results show satisfactory agreement with experiment data.Simulated results also show:channel length,Ge content,substrate doping concentration,cap layer thickness and gate oxide thickness affect threshold voltage intensively while channel length less than 200 nm.SCE and DIBL may be ignorable while channel length is more than 500 nm.

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Available abstract

An analytical model on threshold voltage of SiGe channel pMOSFET is developed by solving Poisson's equation.Short channel effect(SCE) and drain induced barrier lower(DIBL) are taken into account in the model.Simulated results show satisfactory agreement with experiment data.Simulated results also show:channel length,Ge content,substrate doping concentration,cap layer thickness and gate oxide thickness affect threshold voltage intensively while channel length less than 200 nm.SCE and DIBL may be ignorable while channel length is more than 500 nm.

Key concepts: Drain-induced barrier lowering, Channel length modulation, Threshold voltage, Materials science, Reverse short-channel effect, Channel (broadcasting), Short-channel effect, Optoelectronics

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