2014•Journal of Central South UniversityRequires access

Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology

Bin Wang, Zhang He-Ming, Huiyong Hu, Yuming Zhang, Chunyu Zhou, Yuchen Li

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Key concepts: Doping, Threshold voltage, Materials science, Substrate (aquarium), Channel (broadcasting), Voltage, Optoelectronics, Plateau (mathematics)

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Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology — Research Paper | ScholarLens