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2005•Journal of Electron DevicesRequires access

A 10 Gbit/s GaAs Transimpedance Preamplifier

Guoquan Wang

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Abstract

GaAs-based pHEMT-technology is fit for high speed preamplifier for 10 Gbit/s operation. A GaAs monolithic integrated transimpedance preamplifier for 10 Gbit/s fiber-optic communication receiver has been designed, fabricated and characterized. The bandwidth of the preamplifier is increased effectively by using series inductor technology. The result of simulation achieved a bandwidth of 9.0 GHz and a transimpedance gain of 58 dBΩ. This preamplifier has been fabricated using 0.2 μm GaAs-based pHEMT EB direct writing T-shaped gate technology and tested at a data rate of 10 Gbit/s.

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What this paper is about

GaAs-based pHEMT-technology is fit for high speed preamplifier for 10 Gbit/s operation. A GaAs monolithic integrated transimpedance preamplifier for 10 Gbit/s fiber-optic communication receiver has been designed, fabricated and characterized. The bandwidth of the preamplifier is increased effectively by using series inductor technology. The result of simulation achieved a bandwidth of 9.0 GHz and a transimpedance gain of 58 dBΩ. This preamplifier has been fabricated using 0.2 μm GaAs-based pHEMT EB direct writing T-shaped gate technology and tested at a data rate of 10 Gbit/s.

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Available abstract

GaAs-based pHEMT-technology is fit for high speed preamplifier for 10 Gbit/s operation. A GaAs monolithic integrated transimpedance preamplifier for 10 Gbit/s fiber-optic communication receiver has been designed, fabricated and characterized. The bandwidth of the preamplifier is increased effectively by using series inductor technology. The result of simulation achieved a bandwidth of 9.0 GHz and a transimpedance gain of 58 dBΩ. This preamplifier has been fabricated using 0.2 μm GaAs-based pHEMT EB direct writing T-shaped gate technology and tested at a data rate of 10 Gbit/s.

Key concepts: Transimpedance amplifier, Preamplifier, Gigabit, High-electron-mobility transistor, Bandwidth (computing), Optoelectronics, Materials science, Electrical engineering

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