E. Legros, S. Vuye, L. Giraudet, C. Joly
Abstract
The authors report a 40 Gbit/s photoreceiver made with a GaAlInAs/InP 0.78 A/W, a 50 GHz side illumination photodiode and three GaAs PHEMT distributed amplifiers, assembled in a pigtailed module, giving a 37 GHz bandwidth, a 10.4 pA/√Hz average input noise and a 65 dBΩ transimpedance.
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The authors report a 40 Gbit/s photoreceiver made with a GaAlInAs/InP 0.78 A/W, a 50 GHz side illumination photodiode and three GaAs PHEMT distributed amplifiers, assembled in a pigtailed module, giving a 37 GHz bandwidth, a 10.4 pA/√Hz average input noise and a 65 dBΩ transimpedance.
Key concepts: Transimpedance amplifier, High-electron-mobility transistor, Gigabit, Photodiode, Amplifier, Optoelectronics, Distributed amplifier, Sensitivity (control systems)