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Preparation and properties of high (002) orientation ZnO-Li~+ films

Chen Zhu, Zhang Shuren, Yang Cheng-tao

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Abstract

The different concentration of Li~+ doped in ZnO ceramic target was fabricated,and ZnO films were grown on Si(100)substrate by using RF magnetron sputtering technique.The effects of deposition temperature,oxygen partial pressure and RF sputtering power on the microstructure,surface morphology and preferred orientation of ZnO films were investigated.The results show that the optimum concentration(mol fraction)of Li~+ doped in ZnO ceramic target is 2.2%,and the optimum sputtering temperature is 300℃,ambient volume rate is Ar:O_2=20:5,RF sputtering power is 50～60W.The ZnO films with high c-axis orientation,homogeneous,dense and insulative resistivity of 4.12×10~8Ω.cm were obtained,which completely meet the requirement of surface acoustic wave(SAW)application.

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The different concentration of Li~+ doped in ZnO ceramic target was fabricated,and ZnO films were grown on Si(100)substrate by using RF magnetron sputtering technique.The effects of deposition temperature,oxygen partial pressure and RF sputtering power on the microstructure,surface morphology and preferred orientation of ZnO films were investigated.The results show that the optimum concentration(mol fraction)of Li~+ doped in ZnO ceramic target is 2.2%,and the optimum sputtering temperature is 300℃,ambient volume rate is Ar:O_2=20:5,RF sputtering power is 50～60W.The ZnO films with high c-axis orientation,homogeneous,dense and insulative resistivity of 4.12×10~8Ω.cm were obtained,which completely meet the requirement of surface acoustic wave(SAW)application.

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Available abstract

The different concentration of Li~+ doped in ZnO ceramic target was fabricated,and ZnO films were grown on Si(100)substrate by using RF magnetron sputtering technique.The effects of deposition temperature,oxygen partial pressure and RF sputtering power on the microstructure,surface morphology and preferred orientation of ZnO films were investigated.The results show that the optimum concentration(mol fraction)of Li~+ doped in ZnO ceramic target is 2.2%,and the optimum sputtering temperature is 300℃,ambient volume rate is Ar:O_2=20:5,RF sputtering power is 50～60W.The ZnO films with high c-axis orientation,homogeneous,dense and insulative resistivity of 4.12×10~8Ω.cm were obtained,which completely meet the requirement of surface acoustic wave(SAW)application.

Key concepts: Materials science, Sputtering, Microstructure, Ceramic, Sputter deposition, Deposition (geology), Doping, Substrate (aquarium)

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