Determination of impurity elements in silicon carbide by inductively coupled plasma atomic emission spectrometry

A method was proposed for the simultaneous determination of micro Fe,Al,Ti,Ca,Mg,P and Mn in silicon carbide by inductively coupled plasma atomic emission spectrometry.The sample was fused with the mixed fluxing agent of anhydrous sodium carbonate-boric acid,and extracted by nitric acid.The boron was removed by methanol,and silicon was removed by volatilization with hydrofluoric acid.The sample solution was determined under the selected instrumental conditions.The interference of matrix was corrected by matrix matching method.The detection limits of testing elements were 0.001-0.054 μg/mL,and the relative standard deviation(RSD,n=9) was 0.5 %-3.7 %.By the comparison,it was found that the results of this method were consistent with those obtained by other methods.