Determination of trace boron in industrial silicon by inductively coupled plasma atomic emission spectrometry

Trace boron in industrial silicon was determined by inductively coupled plasma atomic emission spectrometry (ICP-AES) after the sample was decomposed with HNO3-HF mixed acid. The results showed that the volatilization of boron could be effectively inhibited by controlling the heating temperature at 140-180 ℃. The analytical spectral lines were investigated, and B 208.9 nm{161}was selected. Moreover, by properly deducting the background under the experimental conditions, the matrix and other coexiting elements had no interference with the spectra of B 208.9 nm{161}. Under the optimal working conditions of instrument, the detection limit of method was 0.03 μg/mL and the recovery was 90 %-105 % with the relative standard deviation (RSD) of no more than 7.0 % (n=11). The proposed method has been applied to the determination of boron in industrial silicon certified reference materials, and the results were consistent with the certified values.