Development of 6-inch High di/dt Thyristor for Pulse Switch
Wang Zheng-yin
Abstract
Wang Zheng-yin
Abstract
For the high requirements of the thyristor for pulse switch on di/dt tolerance,the turn-on process and di/dt failure mechanism of thyristor are described.The 6-inch thyristor for pulse switch has been developed by choosing appropriate parameters of silicon wafer,adjusting P-base impurity profile,optimizing gate graph,and using double negative angle bevel.The experiment verifies that the pulse peak current can reach 300 kA,the di/dt rating is more than 3 000 A / s,and the thyristor has good stability and reliability.
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For the high requirements of the thyristor for pulse switch on di/dt tolerance,the turn-on process and di/dt failure mechanism of thyristor are described.The 6-inch thyristor for pulse switch has been developed by choosing appropriate parameters of silicon wafer,adjusting P-base impurity profile,optimizing gate graph,and using double negative angle bevel.The experiment verifies that the pulse peak current can reach 300 kA,the di/dt rating is more than 3 000 A / s,and the thyristor has good stability and reliability.
Key concepts: Thyristor, Gate turn-off thyristor, Integrated gate-commutated thyristor, MOS-controlled thyristor, Bevel, Pulse (music), Static induction thyristor, Wafer