2002•Yunnan Daxue xuebao. Shehui kexue banRequires access
The measurement temperature of monocrystalline silicon with Raman spectrum
Fan Yu
Open publisher page 0 citations
Abstract
A method of determination the temperature of monocrystalline silicon with Raman spectrum is raised.We observed 520?cm -1 scattering band of monocrystalline silicon,got the intensities of its stokes and anti-stokes scattering and calculated the temperature of focal point in the surface of monocrystalline silicon.The results of many tests show no difference.This work indicates that the contactless measurement of temperature with Raman spectrum can be carried on at the same time with the study of crystal structure of silicon and this method is practicable and of universal significance.