Characteristic features of Raman scattering of light in silicon doped with high krypton doses

A high-frequency 20-cm −1 shift in the Raman spectrum of silicon implanted with krypton ions has been observed experimentally. The dynamics of the transformation of the microscopic structure of the surface layer of silicon was investigated on the basis of Raman scattering data obtained for different regimes of Kr + implantation and laser annealing. The experimental data obtained by us are explained well by the presence of local mechanical stresses (∼40 kbar) due to the presence of heavy inert Kr atoms at the lattice sites.