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2001•Chinese Journal of Liquid Crystals and DisplaysRequires access

Simulation of Static-Characteristics of Lightly-doped-drain Polysilicon Thin Film Transistors

Ji Shi

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Abstract

For the purpose of reducing the p Si TFT off state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off state current modified by hot carrier effect, the static characteristics of LDD p Si TFT were simulated. The on/off current switching ratios of p Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off state current to 10 -11 A and increase the on/off current switching ratios of p Si TFT to 10 6. The results will be valuable referencepoints for designing and fabricating of p Si TFT.

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For the purpose of reducing the p Si TFT off state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off state current modified by hot carrier effect, the static characteristics of LDD p Si TFT were simulated. The on/off current switching ratios of p Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off state current to 10 -11 A and increase the on/off current switching ratios of p Si TFT to 10 6. The results will be valuable referencepoints for designing and fabricating of p Si TFT.

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Available abstract

For the purpose of reducing the p Si TFT off state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off state current modified by hot carrier effect, the static characteristics of LDD p Si TFT were simulated. The on/off current switching ratios of p Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off state current to 10 -11 A and increase the on/off current switching ratios of p Si TFT to 10 6. The results will be valuable referencepoints for designing and fabricating of p Si TFT.

Key concepts: Homojunction, Thin-film transistor, Materials science, Optoelectronics, Doping, Current (fluid), Transistor, Electrical engineering

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