2001Transactions of the China Welding InstitutionRequires access

Joining Mechanism of Field-assisted Diffusion Bonding of Borosilicate Glass to Metals

Meng Qing

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Abstract

The features of microstructure in the boding interface arca of field assisted diffusion bonding(FDB)of to have been studied,bonding mechanism and its influence factors have been analyzed by meams of SEM,EDX and XRD,for which the bonding of electrolyte to moncrystal silicon and aluminum has been used as examples.The models of metal oxides glass of joining structure and ions diffusion bonding are indicated.A special bonding machine is used,voltage is 400~800 V,pressure is 0.05~1.0 MPa,temperature is 250~400 ℃.The present study concludes that the joining forming is contributed by process of oxygen ions flowing and bonding with ions and deposited in the interface;the voltage,temperature,pressure and surface roughness of test wafers are influence factors for ions flowing and bonding;the pillar shape microsturcture in the transitional area is favorable to bonding strength.

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The features of microstructure in the boding interface arca of field assisted diffusion bonding(FDB)of to have been studied,bonding mechanism and its influence factors have been analyzed by meams of SEM,EDX and XRD,for which the bonding of electrolyte to moncrystal silicon and aluminum has been used as examples.The models of metal oxides glass of joining structure and ions diffusion bonding are indicated.A special bonding machine is used,voltage is 400~800 V,pressure is 0.05~1.0 MPa,temperature is 250~400 ℃.The present study concludes that the joining forming is contributed by process of oxygen ions flowing and bonding with ions and deposited in the interface;the voltage,temperature,pressure and surface roughness of test wafers are influence factors for ions flowing and bonding;the pillar shape microsturcture in the transitional area is favorable to bonding strength.

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Available abstract

The features of microstructure in the boding interface arca of field assisted diffusion bonding(FDB)of to have been studied,bonding mechanism and its influence factors have been analyzed by meams of SEM,EDX and XRD,for which the bonding of electrolyte to moncrystal silicon and aluminum has been used as examples.The models of metal oxides glass of joining structure and ions diffusion bonding are indicated.A special bonding machine is used,voltage is 400~800 V,pressure is 0.05~1.0 MPa,temperature is 250~400 ℃.The present study concludes that the joining forming is contributed by process of oxygen ions flowing and bonding with ions and deposited in the interface;the voltage,temperature,pressure and surface roughness of test wafers are influence factors for ions flowing and bonding;the pillar shape microsturcture in the transitional area is favorable to bonding strength.

Key concepts: Anodic bonding, Diffusion bonding, Thermocompression bonding, Materials science, Borosilicate glass, Wafer bonding, Diffusion, Wafer

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