Thickness Dependence of Optoelectric Properties of ZnO∶Zr Films Prepared on Water-Cooled Glass Substrate at Room Temperature
Yuan Changkun
Abstract
Yuan Changkun
Abstract
Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency magnetron sputtering at room temperature.The lowest resistivity achieved is 1.81×10-3 Ω·cm at a thickness of 213 nm.All the films present a high transmittance of above 93.0% in the visible range.The optical band gap decreases from 3.58 eV to 3.50 eV as the thickness increases from 125 nm to 350 nm.
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Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency magnetron sputtering at room temperature.The lowest resistivity achieved is 1.81×10-3 Ω·cm at a thickness of 213 nm.All the films present a high transmittance of above 93.0% in the visible range.The optical band gap decreases from 3.58 eV to 3.50 eV as the thickness increases from 125 nm to 350 nm.
Key concepts: Materials science, Transmittance, Electrical resistivity and conductivity, Substrate (aquarium), Zirconium, Sputter deposition, Band gap, Optoelectronics