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ChemInform Abstract: GROWTH OF INDIUM ANTIMONIDE AND INDIUM ARSENIDE ANTIMONIDE (INAS1‐XSBX) BY OM‐CVD

P.K. Chiang, S. M. Bedair

Abstract

Abstract Epitaktische Schichten von lnSb und InAs, ‐"Sb" wurden durch OM‐CVD (organometallic chemical vapor deposition) mitt‐els Triethylindium, Trimethylantimon und Arsin (AsH3) auf großflächigen GaAs‐ und lnSb‐Substraten erhalten.

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Available abstract

Key concepts: Antimonide, Indium antimonide, Chemical vapor deposition, Indium arsenide, Arsenide, Indium, Materials science, Group 2 organometallic chemistry