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Atomically flat III-antimonide epilayers grown using liquid phase epitaxy

Anuj Kumar, Sujatha Sridaran, P.S. Dutta

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Abstract

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using liquid phase epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 /spl mu/m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5/spl conint/ /spl larr/ 5 /spl mu/m.

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What this paper is about

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using liquid phase epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 /spl mu/m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5/spl conint/ /spl larr/ 5 /spl mu/m.

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Available abstract

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using liquid phase epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 /spl mu/m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5/spl conint/ /spl larr/ 5 /spl mu/m.

Key concepts: Antimonide, Epitaxy, Materials science, Gallium antimonide, Liquid phase, Surface finish, Optoelectronics, Surface roughness

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