František Moravec, L. Štourač
Abstract
Gallium antimonide crystals grown by Czocrhalski method have attracted renewed attention because of their importance for technical use. The technological factors are reviewed and the morphology and some optical and electrical parameters of GaSb dependent on the residual structural acceptors are summarized.
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Gallium antimonide crystals grown by Czocrhalski method have attracted renewed attention because of their importance for technical use. The technological factors are reviewed and the morphology and some optical and electrical parameters of GaSb dependent on the residual structural acceptors are summarized.
Key concepts: Characterization (materials science), Materials science, Optoelectronics, Engineering physics, Nanotechnology, Physics