Characterization of Cu(InGa)Se2 (CIGS) Thin Films in Solar Cell Devices by Secondary Ion Mass Spectrometry

In this study, a quantitative analysis of Cu(InGa)Se2 (CIGS) was performed using an electron probe microanalysis (EPMA) equipped with a wavelength dispersed spectroscopy (WDS), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and dynamic secondary ion mass spectrometry (dynamic SIMS). Reproducible quantitative analysis data were obtained for CIGS layers from a depth profile of SIMS and relative sensitivity factor (RSF) value calculated using the mole fraction of EPMA. In addition, to obtain a reproducible quantitative analysis for CIGS layers through SIMS depth profile, the experimental conditions were changed including the primary ion, beam energy, and beam current.