Electron Microprobe Analysis of Ion-Implanted CdS
P. K. Govind, F.J. Fraikor
Abstract
P. K. Govind, F.J. Fraikor
Abstract
An electron beam microprobe was utilized to study the depth distribution of ion-implanted bismuth in CdS. The results, shown as a plot of relative Bi concentration vs depth, indicate that the bismuth concentration profile is of the type exp(−x/λ). Furthermore, the microprobe data reveal substantially deeper ion penetrations than predicted by LSS range theory.
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An electron beam microprobe was utilized to study the depth distribution of ion-implanted bismuth in CdS. The results, shown as a plot of relative Bi concentration vs depth, indicate that the bismuth concentration profile is of the type exp(−x/λ). Furthermore, the microprobe data reveal substantially deeper ion penetrations than predicted by LSS range theory.
Key concepts: Microprobe, Bismuth, Electron microprobe, Ion, Ion implantation, Materials science, Analytical Chemistry (journal), Range (aeronautics)