1972Journal of Applied PhysicsRequires access

Electron Microprobe Analysis of Ion-Implanted CdS

P. K. Govind, F.J. Fraikor

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Abstract

An electron beam microprobe was utilized to study the depth distribution of ion-implanted bismuth in CdS. The results, shown as a plot of relative Bi concentration vs depth, indicate that the bismuth concentration profile is of the type exp(−x/λ). Furthermore, the microprobe data reveal substantially deeper ion penetrations than predicted by LSS range theory.

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What this paper is about

An electron beam microprobe was utilized to study the depth distribution of ion-implanted bismuth in CdS. The results, shown as a plot of relative Bi concentration vs depth, indicate that the bismuth concentration profile is of the type exp(−x/λ). Furthermore, the microprobe data reveal substantially deeper ion penetrations than predicted by LSS range theory.

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Available abstract

An electron beam microprobe was utilized to study the depth distribution of ion-implanted bismuth in CdS. The results, shown as a plot of relative Bi concentration vs depth, indicate that the bismuth concentration profile is of the type exp(−x/λ). Furthermore, the microprobe data reveal substantially deeper ion penetrations than predicted by LSS range theory.

Key concepts: Microprobe, Bismuth, Electron microprobe, Ion, Ion implantation, Materials science, Analytical Chemistry (journal), Range (aeronautics)

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