2011•Electrochemical and Solid-State LettersOpen access

Improved Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors by Zr Addition

You Seung Rim, D. L. Kim, Woong Hee Jeong, Hyun Jae Kim

Abstract

We investigated the effect of adsorption of specific molecules on undoped zinc tin oxide (ZTO) and zirconium (Zr)-doped zinc tin oxide (ZZTO) thin-film transistors (TFTs) using a solution process. The specific chemisorbed species on the back channel region produced unstable ZTO TFT electrical properties under a bias stress test. However, the amount of specific chemisorbed ZTO TFT species could be controlled by Zr doping. As a result, the threshold voltage shift of the ZZTO TFT was dramatically improved comparing the ZTO TFT under positive bias stress.

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Key concepts: Thin-film transistor, Materials science, Doping, Threshold voltage, Tin, Solution process, Zirconium, Stress (linguistics)