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2013•International Workshop on Active-Matrix Flatpanel Displays and DevicesRequires access

A novel a-InGaZnO TFT based voltage programmed pixel circuit to compensate threshold voltage and mobility variations

Yongchan Kim, Jerzy Kanicki, Hojin Lee

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Abstract

In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

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What this paper is about

In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

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Available abstract

In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.

Key concepts: Thin-film transistor, AMOLED, Threshold voltage, OLED, Materials science, Optoelectronics, Active matrix, Transistor

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