Layered Structure of Sputter Deposited Indium Zinc Oxide Films
Jun-ichi Echigoya, Akio Segawa, Shiho Yamazaki, Yuichiro Hayasaka
Abstract
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Jun-ichi Echigoya, Akio Segawa, Shiho Yamazaki, Yuichiro Hayasaka
Abstract
Open-access reader
Layered structure of indium zinc oxide (IZO) films sputter deposited on a (001) sapphire substrate at temperatures of 673 and 873 K was investigated by electron microscopy. IZO films were grown epitaxially in [001] direction on a sapphire substrate. Lattice distances of a deposited IZO film were close to those of an In2ZnkOk+3 compound estimated from In-Zn ratio of the film. Periodical layered structure was observed in the films of k=1, 2, and 3, when the substrate temperature was 873 K. Crystal structure and lattice parameters of the compound of k=1, In2ZnO4 was determined as a=0.3392 nm, c=2.627 nm with the rhombohedral structure.
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Layered structure of indium zinc oxide (IZO) films sputter deposited on a (001) sapphire substrate at temperatures of 673 and 873 K was investigated by electron microscopy. IZO films were grown epitaxially in [001] direction on a sapphire substrate. Lattice distances of a deposited IZO film were close to those of an In2ZnkOk+3 compound estimated from In-Zn ratio of the film. Periodical layered structure was observed in the films of k=1, 2, and 3, when the substrate temperature was 873 K. Crystal structure and lattice parameters of the compound of k=1, In2ZnO4 was determined as a=0.3392 nm, c=2.627 nm with the rhombohedral structure.
Key concepts: Materials science, Sapphire, Sputtering, Indium, Zinc, Crystal structure, Epitaxy, Substrate (aquarium)