1994•Journal of Crystal GrowthRequires access

Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets

Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki

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Key concepts: Indium, Epitaxy, Materials science, Mole fraction, Metalorganic vapour phase epitaxy, Layer (electronics), Vapor phase, Indium gallium nitride

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Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets — Research Paper | ScholarLens