ScholarLens Back to search
2002•Unpublished venueRequires access

Computational large-signal analysis of p-type low-high-low InP IMPATT diodes

E.-S.A. El-Badawy, Said H. Ibrahim

Open publisher page 0 citations

Abstract

Due to its superiority, regarding the velocity-field characteristic, the performance of n-type InP IMPATT diodes has been extensively studied. On the other hand, the performance of the p-type IMPATT diodes is not sufficiently studied. The investigation of p-type IMPATT diodes is necessary for the design and optimization of low-high-low InP IMPATT diodes and for the optimum design of the microwave circuit where the IMPATT diode is embedded. This paper presents the results of a detailed computational study of p-type InP IMPATT diodes. These results are obtained using our computer simulation program that takes fully into account the non-linearities and all the physical effects pertinent to the IMPATT diode operation. Some important conclusions concerning the effect of the peak value of the microwave signal on the operation and performance of IMPATT diodes are drawn out.

About this research paper

What this paper is about

Due to its superiority, regarding the velocity-field characteristic, the performance of n-type InP IMPATT diodes has been extensively studied. On the other hand, the performance of the p-type IMPATT diodes is not sufficiently studied. The investigation of p-type IMPATT diodes is necessary for the design and optimization of low-high-low InP IMPATT diodes and for the optimum design of the microwave circuit where the IMPATT diode is embedded. This paper presents the results of a detailed computational study of p-type InP IMPATT diodes. These results are obtained using our computer simulation program that takes fully into account the non-linearities and all the physical effects pertinent to the IMPATT diode operation. Some important conclusions concerning the effect of the peak value of the microwave signal on the operation and performance of IMPATT diodes are drawn out.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Due to its superiority, regarding the velocity-field characteristic, the performance of n-type InP IMPATT diodes has been extensively studied. On the other hand, the performance of the p-type IMPATT diodes is not sufficiently studied. The investigation of p-type IMPATT diodes is necessary for the design and optimization of low-high-low InP IMPATT diodes and for the optimum design of the microwave circuit where the IMPATT diode is embedded. This paper presents the results of a detailed computational study of p-type InP IMPATT diodes. These results are obtained using our computer simulation program that takes fully into account the non-linearities and all the physical effects pertinent to the IMPATT diode operation. Some important conclusions concerning the effect of the peak value of the microwave signal on the operation and performance of IMPATT diodes are drawn out.

Key concepts: IMPATT diode, Diode, Optoelectronics, Microwave, Materials science, SIGNAL (programming language), Electrical engineering, Electronic engineering

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Computational large-signal analysis of p-type low-high-low InP IMPATT diodes — Research Paper | ScholarLens