2016•arXiv (Cornell University)Open access
Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices
Tukaram Dattatray Dongale, Kishorkumar V. Khot, Santosh V. Mohite, S. S. Khandagale, S.S. Shinde, Annasaheb Vitthal Moholkar, Keshav Y. Rajpure, Popatrao N. Bhosale, Pramod S. Patil, P. K. Gaikwad, Rajanish K. Kamat
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Abstract
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.
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