De Haas‐Van Alphen Effect and the Band Structure of UGe3

De Haas‐van Alphen measurements and band structure calculations are reported for UGe3, a compound characterized by spin‐fluctuation phenomena. Only a partial construction of the Fermi surface is possible from the complex experimental data. Band structure calculations are at present plagued by numerical difficulties but, while not agreeing in detail with the data, nevertheless do show some of the features of the Fermi surface. Considerable structure in N(E) is predicted within 0.1 eV of EF. Large mass enhancements in UGe3 are implied by these preliminary results.