2015•VacuumRequires access

Process parameters influence on the growth rate during silicon purification by vacuum directional solidification

Shi Qiu, Shutao Wen, Ming Fang, Lei Zhang, Chuanhai Gan, Dachuan Jiang, Yi Tan, Jintang Li, Xuetao Luo

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Key concepts: Crucible (geodemography), Ingot, Directional solidification, Silicon, Micro-pulling-down, Impurity, Materials science, Crystal (programming language)

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Process parameters influence on the growth rate during silicon purification by vacuum directional solidification — Research Paper | ScholarLens