2008•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Modeling of powerful GaAs MESFET

A. K. Shestakov, A. M. Myasnikov, К. С. Журавлев

Abstract

In this paper modeling of powerful GaAs Metal Semiconductor Field Effect Transistor (MESFET) was carried out, I-V characteristics with breakdown voltage of MESFET were obtained. With the help of this model optimal characteristics of structure for power MESFET were determined. Recommendations for value of Schottky barrier were proposed. Also breakdown voltage was calculated. More over temperature dependencies of I-V characteristics of MESFET were studied.

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Available abstract

Key concepts: MESFET, Schottky diode, Schottky barrier, Breakdown voltage, Field-effect transistor, Materials science, Electrical engineering, Transistor