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77 GHz monolithic MMIC Schottky- and PIN-diode switches based on GaAs MESFET and silicon SIMMWIC technology

A. Klaassen, J.-M. Dieudonne

Open publisher page 10 citations

Abstract

We report on the design, fabrication and evaluation of 77 GHz monolithically integrated MMIC switches. Single-pole double-throw (SPDT) and single-pole three-throw (SP3T) switches were realized with Schottky diodes in a 0.25 /spl mu/m GaAs MESFET technology. To our knowledge, this is the first fabrication of Schottky diodes as switching elements at W-band. In a silicon SIMMWIC technology SPDT switches were developed with PIN diodes. Insertion losses of 1.5-2.5 dB and isolations better than 20 dB were obtained at 77 GHz for the different switch types. A comparison between the GaAs MESFET and the SIMMWIC technology concerning switch RF-performance, power capability and switching speed is given in this paper.>

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What this paper is about

We report on the design, fabrication and evaluation of 77 GHz monolithically integrated MMIC switches. Single-pole double-throw (SPDT) and single-pole three-throw (SP3T) switches were realized with Schottky diodes in a 0.25 /spl mu/m GaAs MESFET technology. To our knowledge, this is the first fabrication of Schottky diodes as switching elements at W-band. In a silicon SIMMWIC technology SPDT switches were developed with PIN diodes. Insertion losses of 1.5-2.5 dB and isolations better than 20 dB were obtained at 77 GHz for the different switch types. A comparison between the GaAs MESFET and the SIMMWIC technology concerning switch RF-performance, power capability and switching speed is given in this paper.>

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Available abstract

We report on the design, fabrication and evaluation of 77 GHz monolithically integrated MMIC switches. Single-pole double-throw (SPDT) and single-pole three-throw (SP3T) switches were realized with Schottky diodes in a 0.25 /spl mu/m GaAs MESFET technology. To our knowledge, this is the first fabrication of Schottky diodes as switching elements at W-band. In a silicon SIMMWIC technology SPDT switches were developed with PIN diodes. Insertion losses of 1.5-2.5 dB and isolations better than 20 dB were obtained at 77 GHz for the different switch types. A comparison between the GaAs MESFET and the SIMMWIC technology concerning switch RF-performance, power capability and switching speed is given in this paper.>

Key concepts: MESFET, Schottky diode, Monolithic microwave integrated circuit, Fabrication, Optoelectronics, Diode, Materials science, Gallium arsenide

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77 GHz monolithic MMIC Schottky- and PIN-diode switches based on GaAs MESFET and silicon SIMMWIC technology — Research Paper | ScholarLens