2015•Springer proceedings in physicsRequires access

Comparison of 6T and 8T SRAM Cell with Parameters at 45 nm Technology

Joshika Sharma, Saurabh Khandelwal, Shyam Akashe

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Key concepts: Static random-access memory, Leakage power, Leakage (economics), Transistor, Electronic engineering, Microprocessor, Computer science, Electrical engineering

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