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1994•Japanese Journal of Applied PhysicsRequires access

Deep Impurity Centers in CdS Single Crystals Studied by Spectral Analysis of Deep Level Transient Spectroscopy

Junya Yoshino, Kazuyoshi Tanaka, Yoichi Okamoto, Jun Morimoto, Toru Miyakawa

Open publisher page 5 citations

Abstract

Deep impurity centers in CdS single crystals were studied by using spectral analysis of deep level transient spectroscopy (SADLTS) to obtain the emission rate spectrum. We found one deep level below the conduction band with the activation energy and the capture cross section distributed around their central values E 0=0.31 eV and σ0=4.0×10-16 cm2 over widths ΔE=0.013 eV and Δσ=9.3×10-17 cm2, respectively.

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What this paper is about

Deep impurity centers in CdS single crystals were studied by using spectral analysis of deep level transient spectroscopy (SADLTS) to obtain the emission rate spectrum. We found one deep level below the conduction band with the activation energy and the capture cross section distributed around their central values E 0=0.31 eV and σ0=4.0×10-16 cm2 over widths ΔE=0.013 eV and Δσ=9.3×10-17 cm2, respectively.

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Available abstract

Deep impurity centers in CdS single crystals were studied by using spectral analysis of deep level transient spectroscopy (SADLTS) to obtain the emission rate spectrum. We found one deep level below the conduction band with the activation energy and the capture cross section distributed around their central values E 0=0.31 eV and σ0=4.0×10-16 cm2 over widths ΔE=0.013 eV and Δσ=9.3×10-17 cm2, respectively.

Key concepts: Deep-level transient spectroscopy, Impurity, Conduction band, Spectroscopy, Materials science, Transient (computer programming), Spectral line, Atomic physics

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