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Low-Power High-Rensponsivity CMOS Temperature Sensor

Jacqueline Maria Dantas, H. J. B. Costa, J. P. M. Dantas, F. A. Brito Filho, Fernando Rangel de Sousa, Raimundo C. S. Freire

Open publisher page 3 citations

Abstract

This paper proposes a low-power CMOS temperature sensor based on subthreshold MOSFET operation. The circuit was designed on AMIS 0.5 mum technology and ocuppies a silicon area of 0.035 mm2. Simulations show a responsivity of -8.92 mV/C, a resolution of 0.004degC and power consumption of 10 muW.

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What this paper is about

This paper proposes a low-power CMOS temperature sensor based on subthreshold MOSFET operation. The circuit was designed on AMIS 0.5 mum technology and ocuppies a silicon area of 0.035 mm2. Simulations show a responsivity of -8.92 mV/C, a resolution of 0.004degC and power consumption of 10 muW.

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OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper proposes a low-power CMOS temperature sensor based on subthreshold MOSFET operation. The circuit was designed on AMIS 0.5 mum technology and ocuppies a silicon area of 0.035 mm2. Simulations show a responsivity of -8.92 mV/C, a resolution of 0.004degC and power consumption of 10 muW.

Key concepts: CMOS, Responsivity, Power consumption, Electrical engineering, MOSFET, Low-power electronics, Subthreshold conduction, Silicon

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