SILICON CARBIDE SCHOTTKY BARRIER DIODE
Jian Hui Zhao, Kuang Sheng, Ramon Lebron-Velilla
Abstract
Jian Hui Zhao, Kuang Sheng, Ramon Lebron-Velilla
Abstract
This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.
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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.
Key concepts: Schottky diode, Schottky barrier, Metal–semiconductor junction, Diode, Silicon carbide, Optoelectronics, Materials science, Wide-bandgap semiconductor