2004IEEE Transactions on Electron DevicesRequires access

Diffusion Capacitance and Laser Diodes

J. Strologas, K. Hess

Open publisher page 14 citations

Abstract

The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.

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What this paper is about

The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.

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Available abstract

The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.

Key concepts: Diode, Diffusion capacitance, Capacitance, Step recovery diode, Optoelectronics, Materials science, Backward diode, Diffusion

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