2000•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
Optimization issues of AlGaAs/GaAs QW-SCH lasers intended for 808-nm range
A. Maląg, B. Mroziewicz, Anna Kozłowska, Włodzimierz Strupiński, Lech Dobrzański, M. Teodorczyk, Sylwia Wrobel, M. Możdżonek
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Abstract
To meet the requirements for the narrow emission line of ht laser diode pumping system exactly at 808 nm wavelength, an optimization of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the paper the design principles, the characteristics of the manufactured laser diodes based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the MOVPE growth process are presented.