2002Unpublished venueRequires access

Large spontaneous emission factor confirmed in CW lasing microdisk injection lasers

Masayuki Fujita, Reona Ushigome, Toshihiko Baba

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Abstract

Microdisk lasers are suitable for spontaneous emission control due to a high Q lasing mode with an ultra-small volume. However, the clear evaluation of spontaneous factor C is difficult for pulsed and/or photo-pumped devices due to the necessity of a wide range fitting of light-current characteristic from far below threshold. Recently, we have achieved CW lasing in GaInAsP devices with the record low threshold of 40 /spl mu/A. In this study, we fabricated 1.56 /spl mu/m GaInAsP compressively-strained QW microdisk injection lasers and observed some clear evidence of large C factors in the lasing characteristics.

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What this paper is about

Microdisk lasers are suitable for spontaneous emission control due to a high Q lasing mode with an ultra-small volume. However, the clear evaluation of spontaneous factor C is difficult for pulsed and/or photo-pumped devices due to the necessity of a wide range fitting of light-current characteristic from far below threshold. Recently, we have achieved CW lasing in GaInAsP devices with the record low threshold of 40 /spl mu/A. In this study, we fabricated 1.56 /spl mu/m GaInAsP compressively-strained QW microdisk injection lasers and observed some clear evidence of large C factors in the lasing characteristics.

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Available abstract

Microdisk lasers are suitable for spontaneous emission control due to a high Q lasing mode with an ultra-small volume. However, the clear evaluation of spontaneous factor C is difficult for pulsed and/or photo-pumped devices due to the necessity of a wide range fitting of light-current characteristic from far below threshold. Recently, we have achieved CW lasing in GaInAsP devices with the record low threshold of 40 /spl mu/A. In this study, we fabricated 1.56 /spl mu/m GaInAsP compressively-strained QW microdisk injection lasers and observed some clear evidence of large C factors in the lasing characteristics.

Key concepts: Lasing threshold, Optoelectronics, Materials science, Laser, Spontaneous emission, Amplified spontaneous emission, Gain-switching, Semiconductor laser theory

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