Large spontaneous emission factor confirmed in CW lasing microdisk injection lasers
Masayuki Fujita, Reona Ushigome, Toshihiko Baba
Abstract
Masayuki Fujita, Reona Ushigome, Toshihiko Baba
Abstract
Microdisk lasers are suitable for spontaneous emission control due to a high Q lasing mode with an ultra-small volume. However, the clear evaluation of spontaneous factor C is difficult for pulsed and/or photo-pumped devices due to the necessity of a wide range fitting of light-current characteristic from far below threshold. Recently, we have achieved CW lasing in GaInAsP devices with the record low threshold of 40 /spl mu/A. In this study, we fabricated 1.56 /spl mu/m GaInAsP compressively-strained QW microdisk injection lasers and observed some clear evidence of large C factors in the lasing characteristics.
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Microdisk lasers are suitable for spontaneous emission control due to a high Q lasing mode with an ultra-small volume. However, the clear evaluation of spontaneous factor C is difficult for pulsed and/or photo-pumped devices due to the necessity of a wide range fitting of light-current characteristic from far below threshold. Recently, we have achieved CW lasing in GaInAsP devices with the record low threshold of 40 /spl mu/A. In this study, we fabricated 1.56 /spl mu/m GaInAsP compressively-strained QW microdisk injection lasers and observed some clear evidence of large C factors in the lasing characteristics.
Key concepts: Lasing threshold, Optoelectronics, Materials science, Laser, Spontaneous emission, Amplified spontaneous emission, Gain-switching, Semiconductor laser theory