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On-resistance analysis in trench power MOSFETs with fully depletion between trenches

J. Roig, D. Flores, David Jiménez, B. Iñíguez, S. Hidalgo, J. Rebollo

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Abstract

This paper aims to provide a specific on-resistance (R/sub ON/xS) study in trench power MOSFET structures with a distance between trenches (D/sub trench/) in the submicron range. Theoretical and simulation results show the influence of the fully depletion between the two gates on the R/sub ON/xS value. Hence, the different components of R/sub ON/xS are separately analyzed and modelled in order to find their dependency with D/sub trench/.

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What this paper is about

This paper aims to provide a specific on-resistance (R/sub ON/xS) study in trench power MOSFET structures with a distance between trenches (D/sub trench/) in the submicron range. Theoretical and simulation results show the influence of the fully depletion between the two gates on the R/sub ON/xS value. Hence, the different components of R/sub ON/xS are separately analyzed and modelled in order to find their dependency with D/sub trench/.

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Available abstract

This paper aims to provide a specific on-resistance (R/sub ON/xS) study in trench power MOSFET structures with a distance between trenches (D/sub trench/) in the submicron range. Theoretical and simulation results show the influence of the fully depletion between the two gates on the R/sub ON/xS value. Hence, the different components of R/sub ON/xS are separately analyzed and modelled in order to find their dependency with D/sub trench/.

Key concepts: Trench, Power MOSFET, MOSFET, Dependency (UML), Materials science, Power (physics), Spreading resistance profiling, Optoelectronics

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