2012Unpublished venueRequires access

Low power CMOS full adder cells

Attapon Sudsakorn, Siraphop Tooprakai, Kobchai Dejhan

Open publisher page 10 citations

Abstract

This paper presents low power CMOS full adder cells. The full adder cells are utilization to low power by using XOR and XNOR gate architectures with pass transistor logic and transmission gate. All simulation results have been carried out by using HSPICE program simulator based on 22 nm CMOS technology at 1.2 V supply voltages. The operating frequency is 250 MHz. In comparison with other 1 bit adder cells, simulation results show that have used low power consumption and power delay product of SUM and COUT.

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What this paper is about

This paper presents low power CMOS full adder cells. The full adder cells are utilization to low power by using XOR and XNOR gate architectures with pass transistor logic and transmission gate. All simulation results have been carried out by using HSPICE program simulator based on 22 nm CMOS technology at 1.2 V supply voltages. The operating frequency is 250 MHz. In comparison with other 1 bit adder cells, simulation results show that have used low power consumption and power delay product of SUM and COUT.

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Available abstract

This paper presents low power CMOS full adder cells. The full adder cells are utilization to low power by using XOR and XNOR gate architectures with pass transistor logic and transmission gate. All simulation results have been carried out by using HSPICE program simulator based on 22 nm CMOS technology at 1.2 V supply voltages. The operating frequency is 250 MHz. In comparison with other 1 bit adder cells, simulation results show that have used low power consumption and power delay product of SUM and COUT.

Key concepts: Adder, XNOR gate, Transmission gate, CMOS, Power–delay product, Serial binary adder, Computer science, Transistor

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