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Effect of absorbing layer thickness on efficiency solar cells based on Cu(In,Ga)(S,Se)2

Mikhail S. Tivanov, Aleksander K. Fedotov, L. Astashenok, Paweł Węgierek

Open publisher page 6 citations

Abstract

On the basis of one-dimensional model of the solar cell (SC) the influence of photoactive layer thickness on the photocurrent (a key \nparameter for the collection efficiency of photogenerated charge carriers) of a has been studied. It is shown that for a typical Cu(In,Ga)(S,Se)2 - based SC the optimal value of the photoactive layer thickness is about 1.5 mkm. Reducing the thickness of the photoactive layer leads to a sharp decrease in the photocurrent and increase the series resistance.

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What this paper is about

On the basis of one-dimensional model of the solar cell (SC) the influence of photoactive layer thickness on the photocurrent (a key \nparameter for the collection efficiency of photogenerated charge carriers) of a has been studied. It is shown that for a typical Cu(In,Ga)(S,Se)2 - based SC the optimal value of the photoactive layer thickness is about 1.5 mkm. Reducing the thickness of the photoactive layer leads to a sharp decrease in the photocurrent and increase the series resistance.

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Available abstract

On the basis of one-dimensional model of the solar cell (SC) the influence of photoactive layer thickness on the photocurrent (a key \nparameter for the collection efficiency of photogenerated charge carriers) of a has been studied. It is shown that for a typical Cu(In,Ga)(S,Se)2 - based SC the optimal value of the photoactive layer thickness is about 1.5 mkm. Reducing the thickness of the photoactive layer leads to a sharp decrease in the photocurrent and increase the series resistance.

Key concepts: Photocurrent, Photoactive layer, Equivalent series resistance, Materials science, Layer (electronics), Solar cell, Charge carrier, Optoelectronics

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