Effect of absorbing layer thickness on efficiency solar cells based on Cu(In,Ga)(S,Se)2
Mikhail S. Tivanov, Aleksander K. Fedotov, L. Astashenok, Paweł Węgierek
Abstract
Mikhail S. Tivanov, Aleksander K. Fedotov, L. Astashenok, Paweł Węgierek
Abstract
On the basis of one-dimensional model of the solar cell (SC) the influence of photoactive layer thickness on the photocurrent (a key \nparameter for the collection efficiency of photogenerated charge carriers) of a has been studied. It is shown that for a typical Cu(In,Ga)(S,Se)2 - based SC the optimal value of the photoactive layer thickness is about 1.5 mkm. Reducing the thickness of the photoactive layer leads to a sharp decrease in the photocurrent and increase the series resistance.
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On the basis of one-dimensional model of the solar cell (SC) the influence of photoactive layer thickness on the photocurrent (a key \nparameter for the collection efficiency of photogenerated charge carriers) of a has been studied. It is shown that for a typical Cu(In,Ga)(S,Se)2 - based SC the optimal value of the photoactive layer thickness is about 1.5 mkm. Reducing the thickness of the photoactive layer leads to a sharp decrease in the photocurrent and increase the series resistance.
Key concepts: Photocurrent, Photoactive layer, Equivalent series resistance, Materials science, Layer (electronics), Solar cell, Charge carrier, Optoelectronics