An over 18%-efficient completely buffer-free Cu(In,Ga)Se2 solar cell
Shogo Ishizuka, Jiro Nishinaga, Takashi Koida, Hajime Shibata
Abstract
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Shogo Ishizuka, Jiro Nishinaga, Takashi Koida, Hajime Shibata
Abstract
Open-access reader
In this letter, an independently certified photovoltaic efficiency of 18.4% demonstrated from a completely buffer-layer-free Cu(In,Ga)Se 2 (CIGS) solar cell is reported. A Si-doped CIGS thin film was used as the photoabsorber layer and a conductive B-doped ZnO (BZO) front electrode layer was directly deposited on the CIGS layer. Metastable acceptor activation by heat-light soaking treatment was performed to maximize the efficiency. The results presented here are expected to serve as a benchmark for simplified-structure CIGS devices as well as a reference for discussions on the role of buffer layers used in conventional CIGS solar cells.
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In this letter, an independently certified photovoltaic efficiency of 18.4% demonstrated from a completely buffer-layer-free Cu(In,Ga)Se 2 (CIGS) solar cell is reported. A Si-doped CIGS thin film was used as the photoabsorber layer and a conductive B-doped ZnO (BZO) front electrode layer was directly deposited on the CIGS layer. Metastable acceptor activation by heat-light soaking treatment was performed to maximize the efficiency. The results presented here are expected to serve as a benchmark for simplified-structure CIGS devices as well as a reference for discussions on the role of buffer layers used in conventional CIGS solar cells.
Key concepts: Copper indium gallium selenide solar cells, Materials science, Layer (electronics), Optoelectronics, Solar cell, Buffer (optical fiber), Photovoltaic system, Doping