Propagation delay time and delay-power product of a small-sized DSA-ED gate circuit

First-order estimation by the simple scaling concept on a DSA-ED (diffused self-aligned enhancement-depletion) gate circuit is described. Propagation delay time less than 100 ps and delay-power product less than 1 fJ will be obtained by an ED NOR gate with DSA MOS drivers with 0.2 /spl mu/ source-to-drain distance and 200 /spl Aring/ gate oxide thickness.