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2013•Unpublished venueRequires access

Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes

Chang Sheng Xia, Z. M. Simon Li, Yang Sheng Crosslight

Open publisher page 6 citations

Abstract

Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated by APSYS software. The simulation results show that thin LB has positive effect at low p-doping concentration while negative at high concentration and that p-doping is more effective for LEDs with thick LB to increase their efficiency.

About this research paper

What this paper is about

Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated by APSYS software. The simulation results show that thin LB has positive effect at low p-doping concentration while negative at high concentration and that p-doping is more effective for LEDs with thick LB to increase their efficiency.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated by APSYS software. The simulation results show that thin LB has positive effect at low p-doping concentration while negative at high concentration and that p-doping is more effective for LEDs with thick LB to increase their efficiency.

Key concepts: Light-emitting diode, Optoelectronics, Doping, Materials science, Diode, Quantum efficiency, Wide-bandgap semiconductor, Blue light

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