1981•Journal of Crystal GrowthRequires access

High purity GaAs prepared from trimethylgallium and arsine

P.D. Dapkus, Harold M. Manasevit, K. L. Hess, T. S. Low, G. E. Stillman

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Key concepts: Arsine, Trimethylgallium, Impurity, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Photoluminescence, Analytical Chemistry (journal), Chemistry

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