ScholarLens Back to search
2002•Unpublished venueRequires access

Complete transient simulation of flash EEPROM devices

S. Keeney, F. Piccinini, Marco Morelli, A. Mathewson, C. Lombardi, R. Bez, L. Ravazzi, D. Cantarelli

Open publisher page 16 citations

Abstract

It has been demonstrated that the Fowler-Nordheim tunneling, hot electron injection, and band-to-band tunneling current models incorporated into the 2D device simulator HFIELDS have allowed an accurate simulation and analysis of the flash EEPROM cell during the transient writing cycles. These represent all the important physical mechanisms which occur during the writing of flash EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 mu m technology.>

About this research paper

What this paper is about

It has been demonstrated that the Fowler-Nordheim tunneling, hot electron injection, and band-to-band tunneling current models incorporated into the 2D device simulator HFIELDS have allowed an accurate simulation and analysis of the flash EEPROM cell during the transient writing cycles. These represent all the important physical mechanisms which occur during the writing of flash EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 mu m technology.>

Why it matters

OpenAlex reports 16 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

It has been demonstrated that the Fowler-Nordheim tunneling, hot electron injection, and band-to-band tunneling current models incorporated into the 2D device simulator HFIELDS have allowed an accurate simulation and analysis of the flash EEPROM cell during the transient writing cycles. These represent all the important physical mechanisms which occur during the writing of flash EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 mu m technology.>

Key concepts: EEPROM, Flash (photography), EPROM, Transient (computer programming), Quantum tunnelling, Computer science, Optoelectronics, Electrical engineering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Complete transient simulation of flash EEPROM devices — Research Paper | ScholarLens