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Numerical Analysis of Triple - Barrier GaAs/ Al x Ga 1-x As Resonant Tunneling Structure Using PMM Approach

Abbas Zarifkar, Abolfazl Mohammadi Bagherabadi

Abstract

A theoretical study of triple barrier resonant tunneling diode with multilayer GaAs/AlxGa1-xAs heterostructure is presented based on an exact solution of the Schrodinger equation under the application of a constant electric field and a uniform magnetic field. Using propagation matrix method (PMM), the transmissivity of the structure is calculated as a function of the incident electron energy for different values of applied voltage. The results show good agreement with other existing models. Key words:

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Key concepts: Quantum tunnelling, Heterojunction, Schrödinger equation, Condensed matter physics, Resonant-tunneling diode, Electric field, Diode, Electron