Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra

Time-dependent characteristics of electron resonant tunneling in quantum heterostructures based on GaAs and AlAs are investigated using the two-valley model. Analysis of the phases of the transmitted and reflected waves yields analytic expressions for tunneling and reflection times. The solution to the problem incorporates the decay of Γ-and X -valley resonant states in these heterostructures. Numerical solution of the nonstationary Schrödinger equation is used to demonstrate the tunneling of wave packets through double-barrier heterostructures.