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2005•IEEE Photonics Technology LettersRequires access

High-performance InGaAs-InP APDs on GaAs

Darlene Franco, Ken Vaccaro, William R. Clark, William A. Teynor, H.M. Dauplaise, Mark Roland, Brian Krejca, J.P. Lorenzo

Open publisher page 13 citations

Abstract

Epitaxial layer transfer was used to fabricate In/sub 0.53/Ga/sub 0.47/As-InP avalanche photodiodes on GaAs substrates. The photodiodes displayed a gain-bandwidth product of 80 GHz, dark current of 10.20 nA at 90% of the breakdown voltage, and responsivity of 5.9 A/W at 2 V below breakdown. Performance is comparable to standard devices fabricated on InP substrates, suggesting the transfer process does not degrade material quality.

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What this paper is about

Epitaxial layer transfer was used to fabricate In/sub 0.53/Ga/sub 0.47/As-InP avalanche photodiodes on GaAs substrates. The photodiodes displayed a gain-bandwidth product of 80 GHz, dark current of 10.20 nA at 90% of the breakdown voltage, and responsivity of 5.9 A/W at 2 V below breakdown. Performance is comparable to standard devices fabricated on InP substrates, suggesting the transfer process does not degrade material quality.

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Available abstract

Epitaxial layer transfer was used to fabricate In/sub 0.53/Ga/sub 0.47/As-InP avalanche photodiodes on GaAs substrates. The photodiodes displayed a gain-bandwidth product of 80 GHz, dark current of 10.20 nA at 90% of the breakdown voltage, and responsivity of 5.9 A/W at 2 V below breakdown. Performance is comparable to standard devices fabricated on InP substrates, suggesting the transfer process does not degrade material quality.

Key concepts: APDS, Responsivity, Avalanche photodiode, Optoelectronics, Materials science, Dark current, Gallium arsenide, Epitaxy

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