2011•Unpublished venueRequires access

Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication

Shiraz Ouarets, B. Orsal, M. Lahrichi, M. Achouche

Abstract

We show for the first time, the results concerning low frequency noise (1HZ-10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation in the power. This specific behavior is explained taking into account the physical properties of APDs.

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Key concepts: Avalanche photodiode, APDS, Indium phosphide, Optoelectronics, Indium gallium arsenide, Materials science, Photodiode, Noise (video)